170220 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAsP / GaP LED Chips

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Item No.: 170220
1. This specification applies to GaAsP / GaP LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
265
120
270
265
p-Electrode
p-Diffusion
n-Epitaxy GaAsP
n-Epitaxy GaAsP
n-Substrate GaP
n-Electrode
Wire bond contacts can also be circular or square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
V_F
I_F = 20 mA
2,20
2,50
Reverse current
I_R
V_R = 5 V
10
Luminous intensity *
I_V
I_F = 20 mA
3,5
6,0
dom. wavelength
λ_D
I_F = 20 mA
590
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
Unit
V
µA
mcd
nm
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