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135144 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs Chips (substrate removed)
INFRA-RED
Item No.: 135144
1. This specification applies to GaAlAs / GaAlAs Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
n-Electrode
n-Epitaxy GaAlAs
365
150
120 typ.
Active Layer
p-Epitaxy GaAlAs
p-Electrode
365
Wire bond contacts can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
VF
IF = 20 mA
Reverse voltage
VR
IR = 10 µA
output Power
Φe
IF = 20 mA
Switching time
tr, tf
IF = 20 mA
Peak wavelength
λP
IF = 20 mA
Power measurement at OSA on gold plate
min
5
2,5
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
Φe typ
min
max
Quantity
typ
1,55
3,4
35
840
max
1,80
Unit
V
V
mW
ns
nm
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OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com