131234 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAs / GaAs LED Chips with GaAlAs window - layer

INFRA-RED
Item No.: 131234
1. This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
365
120
280
typ.
p-Electrode
p-GaAlAs
p-Epitaxy GaAs
n-Epitaxy GaAs
n-Substrate GaAs
365
n-Electrode
Wire bond contacts can also have a spider shape
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
V_F
I_F = 20 mA
1,20
1,40
Reverse current
I_R
I_R = 5 V
10
output Power *
Φ_e
I_F = 20 mA
2,0
2,4
I_F = 50 mA
5,0
6,0
Switching time
t_r, t_f
I_F = 20 mA
500
Peak wavelength
λ_P
I_F = 20 mA
950
* On request, wafers will be delivered according to output power classes
Power measurement at OSA on gold plate
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Unit
V
µA
mW
ns
nm
Type
Lot No.
Φ_e typ
min
max
Quantity
© 2004
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