127141D Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs LED Chips (substrate removed)

INFRA-RED
Item No.: 127141 D
1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
Wire bond contacts can also have a spider shape
3. Outlines (dimensions in microns)
325
120 150
typ.
325
n-Electrode
n-Epitaxy GaAlAs
Active Layer
p-Epitaxy GaAlAs
p-Electrode
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse voltage
V_R
I_R = 10 µA
output Power *
Φ_e
I_F = 20 mA
Peak wavelength
λ_P
I_F = 20 mA
Switching time
t_r, t_f
I_F = 20 mA
½ band width
∆λ
I_F = 20 mA
Power measurement at OSA on gold plate
min
1,60
5
2,5
719
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
Φ_e typ
min
max
Quantity
typ
1,85
3,0
724
40/30
25
max
1,95
4,0
729
29
Unit
V
V
mW
nm
ns
ns
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