127124 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAs Chips (substrate removed)

INFRA-RED
Item No.: 127124
1. This specification applies to GaAlAs / GaAs Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
365
120
270
365
Wire bond contacts can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse voltage
V_R
I_R = 5 µA
output Power *
Φ_e
I_F = 20 mA
Switching time
t_r, t_f
I_F = 20 mA
Peak wavelength
λ_P
I_F = 20 mA
Power measurement at OSA on gold plate
min
0,6
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
Φ_e typ
min
max
Quantity
typ
1,70
0,8
40
740
n-Electrode
n-Epitaxy GaAlAs
Active Layer
p-Epitaxy GaAlAs
p-Substrate GaAs
p-Electrode
max
2,10
10
Unit
V
V
mW
ns
nm
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