126284 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs Chips (substrate removed)

INFRA-RED
Item No.: 126284
1. This specification applies to GaAlAs / GaAlAs Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
365
120 ¹⁸⁰
typ.
365
Wire bond contact can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse voltage
V_R
I_R = 10 µA
output Power *
Φ_e
I_F = 20 mA
Switching time
t_r, t_f
I_F = 20 mA
Peak wavelength
λ_P
I_F = 20 mA
Power measurement at OSA on gold plate
min
5
3,7
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
Φ_e typ
min
max
Quantity
p-Electrode
p-Epitaxy GaAlAs
Active Layer
n-Epitaxy GaAlAs
n-Electrode
typ
1,35
4,5
20
870
max
1,60
Unit
V
V
mW
ns
nm
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