115261L Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs LED Chips (substrate removed)

RED
Item No.: 115261 L
1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
325
125
180
325
p-Electrode
p-Epitaxy GaAlAs
Active Layer
n-Epitaxy GaAlAs
n-Electrode
Wire-bond contacts can also be square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse current
I_R
V_R = 5 V
Luminous intensity
I_V
I_F = 10 mA
Luminous intensity
I_V
I_F = 20 mA
Output power
Φ_e
I_F = 20 mA
Peak wavelength
λ_P
I_F = 20 mA
power measurement at OSA on gold plate
min
8,0
16,0
1,3
5. Packing
Dice on adhesive film with 1) wire-bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
typ
1,85
11,0
22,0
1,6
670
max
2,20
10
Unit
V
µA
mcd
mcd
mW
nm
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