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115260 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs LED Chips (substrate removed)
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Item No.: 115260
1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
265
120
150
265
p-Electrode
p-Epitaxy GaAlAs
Active Layer
n-Epitaxy GaAlAs
n-Electrode
Wire bond contacts can also be circular or square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
VF
IF = 20 mA
Reverse current
IR
VR = 5 V
Luminous intensity *
IV
IF = 20 mA
IF = 10 mA
Peak wavelength
λP
IF = 20 mA
Brightness measurement at OSA on gold plate
min
12
6
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
IV typ
min
max
Quantity
typ
1,90
16
8
660
max
2,30
10
Unit
V
µA
mcd
nm
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OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com