115160 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAlAs LED Chips (substrate removed)

RED
Item No.: 115160
1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
265
120
150
265
Wire bond contacts can also be circular or square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse current
I_R
V_R = 5 V
Luminous intensity *
I_V
I_F = 20 mA
Switching time
t_R
t_f
I_F = 20 mA
Peak wavelength
λ_P
I_F = 20 mA
Brightness measurement at OSA on gold plate
min
12
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
n-Electrode
n-Epitaxy GaAlAs
Active Layer
p-Epitaxy GaAlAs
p-Electrode
typ
1,90
16
50
35
655
max
2,30
10
Unit
V
µA
mcd
ns
nm
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