114230 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAs LED Chips

RED
Item No.: 114230
1. This specification applies to GaAlAs / GaAs LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
265
120
270
265
p-Electrode
p-Epitaxy GaAlAs
Active Layer
n-Epitaxy GaAlAs
n-Substrate GaAs
n-Electrode
Wire bond contacts can also be circular or square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse current
I_R
V_R = 5 V
Luminous intensity *
I_V
I_F = 20 mA
I_F = 10 mA
Peak wavelength
λ_P
I_F = 20 mA
Brightness measurement at OSA on gold plate
min
9
4
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
typ
1,85
12
6
650
max
2,10
10
Unit
V
µA
mcd
nm
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