114110 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAlAs / GaAs LED Chips

RED
Item No.: 114110
1. This specification applies to GaAlAs / GaAs LED Chips
2. Structure
2.1 Mesa structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3. Outlines (dimensions in microns)
265
120
270
265
n-Electrode
n-Epitaxy GaAlAs
Active Layer
p-Epitaxy GaAlAs
p-Substrate GaAs
p-Electrode
Wire bond contacts can also be circular or square
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
V_F
I_F = 20 mA
Reverse current
I_R
V_R = 5 V
Luminous intensity *
I_V
I_F = 20 mA
Peak wavelength
λ_P
I_F = 20 mA
Brightness measurement at OSA on gold plate
min
5,5
5. Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
typ
1,85
7
655
max
2,10
10
Unit
V
µA
mcd
nm
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