English
Language : 

105207 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAsP / GaAs LED Chips
RED
Item No.: 105207
1. This specification applies to GaAsP / GaAs LED Chips
2. Structure
2.1 Planar structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Al
Au alloy
3. Outlines (dimensions in microns)
1210
300
1010
p-Diffusion
p-Electrode
Isolator
n-Epitaxy GaAsP
n-Substrate GaAs
n-Electrode
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions
Forward voltage
VF
IF = 7 mA
Reverse voltage
VR
IR = 10 µA
Luminous intensity
IV
IF = 7 mA
Peak wavelength
λP
IF = 7 mA
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with wire bond side on top
6. Labeling
min
5
150
Type
Lot No.
IV typ
min
max
Quantity
typ
1,65
200
660
max
1,84
Unit
V
V
µcd
nm
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com