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102205 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAsP / GaAs LED Chips
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Item No.: 102205
1. This specification applies to GaAsP / GaAs LED Chips
2. Structure
2.1 Planar structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Al
Au alloy
3. Outlines (dimensions in microns)
p-Electrode
120
300
120
300
260
300
p-Diffusion
Isolator
n-Epitaxy GaAsP
n-Substrate GaAs
n-Electrode
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
VF
IF = 10 mA
1,65
1,84
Reverse voltage
VR
IR = 10 µA
5
Luminous intensity *
IV
IF = 10 mA
250
400
Peak wavelength
λP
IF = 10 mA
660
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with wire bond side on top
6. Labeling
Type
Lot No.
IV typ
min
max
Quantity
Unit
V
V
µcd
nm
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OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com