101205 Datasheet, PDF (1/1 Pages) OSA Opto Light GmbH – GaAsP / GaAs LED Chips

RED
Item No.: 101205
1. This specification applies to GaAsP / GaAs LED Chips
2. Structure
2.1 Planar structure
2.2 Electrodes
p-side (anode)
n-side (cathode)
Al
Au alloy
3. Outlines (dimensions in microns)
p-Electrode
300
120
300
300
p-Diffusion
Isolator
n-Epitaxy GaAsP
n-Substrate GaAs
n-Electrode
4. Electrical and optical characteristics (T=25°C)
Parameter
Symbol Conditions min typ max
Forward voltage
V_F
I_F = 20 mA
1,65
1,84
Reverse voltage
V_R
I_R = 10 µA
5
Luminous intensity *
I_V
I_F = 20 mA
300
600
Peak wavelength
λ_P
I_F = 20 mA
660
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5. Packing
Dice on adhesive film with wire bond side on top
6. Labeling
Type
Lot No.
I_V typ
min
max
Quantity
Unit
V
V
µcd
nm
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