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ERJ-B1CJR13U Datasheet, PDF (3/3 Pages) Panasonic Semiconductor – High Power Chip Resistors / Wide Terminal Type
High Power Chip Resistors / Wide Terminal Type
■ Ratings
Type
(inch size)
Power
Rating
at 70 °C (W)
Limiting
Element
Voltage(1)
(V)
Maximum
Overload
Voltage(2)
(V)
Resistance
Tolerance
(%)
Resistance
Range
(Ω)
T.C.R.
(×10 – 6/°C)
Category
Temperature
Range
(°C)
ERJA1
(2512)
1.33
200
±1 100 m to 10 k (E24) R < 100 mΩ : ±350
400
100 mΩ < R : ±100 (±1%)
–55 to +155
±2, ±5 10 m to 10 k (E24)
±200 (±2%, ±5%)
ERJB1
1
(2010) 2(R < 10 Ω)
200
ERJB2
0.75
(1206) 1(R < 10 Ω)
200
ERJB3
0.33
(0805) 0.5(R < 1 Ω)
150
R < 22 mΩ : ±350
22 mΩ < R < 47 mΩ : ±200
400
±1, ±2, ±5
10 m to 10 k (E24)
47 mΩ < R < 100 mΩ : ±150 (±1%)
±200 (±2%, ±5%)
–55 to +155
100 mΩ < R : ±100 (±1%)
±200 (±2%, ±5%)
±1, ±2 10 m to 1 M (E24) R < 22 mΩ : 0 to +300
22 mΩ < R < 47 mΩ : 0 to +200
47 mΩ < R < 100 mΩ : 0 to +150
400
5 m to 1 M 100 mΩ < R < 220 mΩ : 0 to +150 (±1%) –55 to +155
ʢ  ʣ ±5
5 m to 9 m : 1mΩ step
0 to +200 (±2%, ±5%)
10 m to 1 M : E24
220 mΩ < R : ±100 (±1%)
±200 (±2%, ±5%)
R < 47 mΩ : 0 to +300
200
±1, ±2, ±5
20 m to 10 (E24)
47 mΩ < R < 1 Ω : 0 to +200
1 Ω < R : ±100 (±1%)
–55 to +155
±200 (±2%, ±5%)
(1) Rated Continuous Working Voltage (RCWV) shall be determined from RCWV=√Power Rating × Resistance Values, or Limiting Element Voltage
listed above, whichever less.
(2) Overload (Short-time Overload) Test Voltage (SOTV) shall be determined from SOTV=2.5 × Power Rating or max. Overload Voltage listed above
whichever less.
Power Derating Curve
For resistors operated in ambient temperature above
70 °C, power rating shall be derated in accordance
with the figure on the right.
100
–55 °C
80
70 °C
60
40
20
0
–60 –40 –20
155 °C
0 20 40 60 80 100 120 140 160 180
Ambient Temperature (°C)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
02 Aug. 2012