PD-8100_09 Datasheet, PDF (1/3 Pages) Optoway Technology Inc – GaAs PIN PHOTODIODES

Optoway
PD-8100
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GaAs PIN PHOTODIODES
PD-8100 SERIES
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FEATURES
— High responsivity at 850 nm
— Low dark current
— Quick pulse response
— Hermetically sealed 3-pin metal case
— Active diameter 100 μm
DESCRIPTION
PD-8100 series InGaAs Photodiode are suited to receive the light at the wavelength 850 nm. With high
reliability, PD-8100 series are the best choice for telecom and datacom application.
ELECTRICAL AND OPTICAL CHARACTERISTICS (T_C=25ºC)
Symbol Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R
I_dark
C
T_r /Tf
BW
Active Area
Detection Range
Responsivity
Dark Current
Capacitance
Rise/Fall Time
Bandwidth
V_R=5V, λ=850nm
V_R=5V
V_R=5V
V_R=5V, 10~90%
V_R=5V
100
μm
850
nm
0.45
0.50
0.1
-
A/W
0.7
nA
0.4
0.7
pF
0.15
ns
2
GHz
ABSOLUTE MAXIMUM RATINGS (T_C=25 ºC)
Symbol Parameter
Ratings
Unit
Po
Input Optical Power
2
mW
V_RD Reverse Voltage
20
V
I_FD
Forward Current
2
mA
T_opr
Operating Temperature
-40~+85
ºC
T_stg
Storage Temperature
-40~+85
ºC
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OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303
Tel: [phone]
Fax: [phone]
E-mail: [e-mail] http: // www.optoway.com.tw 4/9/2009 V2.0