APD-1100 Datasheet, PDF (1/2 Pages) Optoway Technology Inc – InGaAs Avalanche PHOTODIODE

Optoway
APD-1100
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InGaAs Avalanche PHOTODIODE
APD-1100 SERIES
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FEATURES
² Data Rate up to 2.7 Gbps
² 0.9 A/W Typical Responsivity
² Breakdown Voltage: 40V Typical
² Wide Wavelength Band: 1260 nm to 1620 nm
² Case Operating Temperature: -40 to 85^oC
² Hermetically sealed 3-pin metal case
APPLICATIONSC
Receiver supports long distance fiber-optics communication systems with performance up to 2.7 Gb/s data
rate, -40 to 85 ^oC operating temperature.
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
VBR
VOP
dVBR/dT
Idark
R
C
BW
Parameter
Detection Range
Breakdown Voltage
Operating Voltage
Temperature Coefficient of
Breakdown Voltage
Dark Current
Responsivity
Capacitance
Bandwidth
Test Conditions
λ
Idark=10µA
Best Sensitivity
VR =0.9 VBR
λ=1550nm, M=1
VR =0.9 VBR, f=1MHz
RL=50 Ω, -3 dB, M=10
Min.
1260
35
0.06
0.85
2.5
Typ.
-
VBR-3
0.07
80
0.9
Max.
1620
47
VBR-2
0.10
100
0.6
Unit
nm
V
V
V/^oC
nA
A/W
pF
GHz
Absolute Maximum Ratings (Tc=25 ºC)
Symbol
Parameter
Minimum
Maximum
Unit
IF
APD Forward Current
2
mA
IR
APD Reverse Current
3
mA
VR
APD Reverse Voltage
T_opr Operating Temperature
T_stg Storage Temperature
VBR
V
-40
85
ºC
-40
85
ºC
Stress in excess of the absolute Maximum Ratings may cause permanent damage to the device.
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OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303
Tel: [phone]
Fax: [phone]
E-mail: [e-mail] http: // www.optoway.com.tw 3/1/2005 V2.0