OSI3XNE3E1E Datasheet, PDF (1/2 Pages) OptoSupply International – Xeon 3 Power 850nm Infrared Emiitttter LED

■Features
● _{Highest luminous flux}
● _{Super energy efficiency}
● _{Very long operating life}
● _{Superior ESD protection}
Xeon 3 Power 850nm Infrared Emitter LED
OSI3XNE3E1E
VER C.0
■Outline Dimension
■Applications
● Night Vision
● Camera
● _{Outdoor./Indoor applications}
Anode
Cathode
Unit:mm
Tolerance:±0.30mm
■Absolute Maximum Rating
℃ (Ta=25 )
Item
Symbol
DC Forward Current
I_F
Pulse Forward Current*
I_FP
Reverse Voltage
V_R
Power Dissipation
P_D
Operating Temperature
Topr
Storage Temperature
Tstg
Lead Soldering Temperature
Tsol
*Pulse width Max.10ms Duty ratio max 1/10
■Electrical -Optical Characteristics
Value
Unit
1000
mA
2000
mA
5
V
2000
mW
-30 ~ +85
℃
-40~ +100
℃
℃ 260 /5sec
-
℃ (Ta=25 )
Item
Symbol Condition Min. Typ. Max. Unit
DC Forward Voltage
DC Reverse Current
V_F
I_F=700mA
-
I_R
V_R=5V
-
1.7 2.0
V
-
10
µA
Peak Wavelength
λ_P
I_F=700mA
-
850
-
nm
Radiant Power
P_O
I_F=700mA 200 250
-
mW
50% Power Angle
2θ1/2
I_F=700mA
-
140
-
deg
Note: Don’t drive at rated current more than 5s without heat sink for Xeon 3 emitter series.
■Directivity
0
0
■Forward Operating Current (DC)
1200
1000
800
600
400
Rth(J-a)=20℃/W
Rth(J-a)=30℃/W
Rth(J-a)=40℃/W
200
0
0
20
40
60
80
100
) Ambient Temperature, TA (
LED & Application Technologies