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ODD-SXU-004 Datasheet, PDF (1/2 Pages) OptoDiode Corp – PHOTODIODE Ø5 mm
PHOTODIODE Ø5 mm
AXUV20HS1
FEATURES
• Circular active area
• Ideal for electron detection
• 100% internal QE
• High speed
• Grid lines 5 microns,
Pitch 100 microns
• RoHS and REACH compliant
RoHS
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Active Area
Ø5.01mm
Responsivity, R
(see graphs on next page)
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
Dark Current
IR = 1µA
160
VR = 0V
RL = 50Ω, VR = 150V
VR = 150V
TYP
19.7
MAX
200
800
2
100
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
Nitrogen or Vacuum
Lead Soldering Temperature2
-10° TO 40°C1
-20°C TO 80°C
260°C
1Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
20.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
UNITS
mm2
A/W
Volts
pF
nsec
nA
Revision July 1, 2013
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com