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ODD-AXU-051 Datasheet, PDF (1/2 Pages) OptoDiode Corp – PHOTODIODE 63 mm2
PHOTODIODE 63 mm2
AXUV63HS1-CH
FEATURES
• Circular active area
• Ideal for electron detection
• 100% internal QE
• High speed
• Hole in center of detector
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Active Area
Ø9mm
Responsivity, R
(see graphs on next page)
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
Dark Current
IR = 1µA
160
VR = 0V
VR = 150V, RL = 50Ω
VR = 150V
TYP
63
MAX
10
2
100
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature1
-10° TO 40°C
-20°C TO 80°C
70°C
260°C
10.08" from case for 10 seconds.
2Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
UNITS
mm2
A/W
Volts
nF
nsec
nA
Revision June 23, 2013
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com