ODD-AXU-010 Datasheet, PDF (1/2 Pages) OptoDiode Corp – ELECTRON DETECTION 100 mm2

ELECTRON DETECTION 100 mm²
AXUV100G
FEATURES
• Ideal for electron detection
• Large detection area
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
10mm x 10mm
Responsivity, R
Shunt Resistance, Rsh
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
@ 254nm, V_R = 0V
V_B = ±10mV
I_R = 1µA
V_R = 0V
V_R = 0V, R_L = 50�
MIN
0.07
20
TYP
100
0.08
10
10
MAX
0.09
44
10
UNITS
mm²
A/W
M-ohm
Volts
nF
usec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient²
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature¹
-10° TO 40°C²
-20°C TO 80°C
70°C
260°C
1_{0.08" from case for 10 seconds.}
2_{Temperatures exceeding these parameters may create Oxide growth on the active area.}
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors”
prior to removing cover.
Revision February 26, 2013
1260 Calle Suerte, Camarillo, California 93012
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com