OD880F Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
1.00
MIN.
ANODE
(CASE)
.209
.015
.220
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
.183 .152
.186 .154
3 _.030
201 ^.040
.100
.017
CATHODE
.197
.205
.041
.036
45°
• Narrow angle for long distance applications
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ER _{ELECTRO-OPTICAL CHARACTERISTICS AT 25°C}
PARAMETERS
TEST CONDITIONS
B _{Total Power Output, Po}
Radiant Intensity, I_e
M _{Peak Emission Wavelength, λP}
E _{Spectral Bandwidth at 50%, Δλ}
Half Intensity Beam Angle, θ
I_F = 100mA
I_F = 50mA
C _{Forward Voltage, VF}
E _{Reverse Breakdown Voltage, VR}
Capacitance, C
D _{Rise Time}
I_F = 100mA
I_R = 10μA
V_R = 0V
E _{Fall Time}
IF ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
L _{Continuous Forward Current}
Peak Forward Current (10μs, 400Hz)²
F _{Reverse Voltage}
O _{Lead Soldering Temperature (1/16" from case for 10sec)}
1Derate _{per Thermal Derating Curve above 25°C}
2Derate _{linearly above 25°C}
D _{THERMAL PARAMETERS}
EN ^{Storage and Operating Temperature Range}
MIN
TYP
MAX
UNITS
15
17
mW
120
135
mW/sr
880
nm
80
nm
8
Deg
1.55
1.9
Volts
5
30
Volts
17
pF
0.5
µsec
0.5
µsec
190mW
100mA
3A
5V
260°C
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, R_THJA1
Thermal Resistance, R_THJA2
350°C/W Typical
115°C/W Typical
1Heat _{transfer minimized by measuring in still air with minimum heat conducting through leads}
2Air _{circulating at a rapid rate to keep case temperature at 25°C}
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com