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OD850WHT Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH TEMPERATURE GaAlAs IR EMITTERS
HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-850WHT
FEATURES
• Extended operating temperature range
• No internal coatings
• No derating or heat sink required to 80°C
• Standard 2-lead TO-46 hermetic package
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Rise Time
Fall Time
IF = 100mA
IF = 20mA
IF = 20mA
IF = 20mA
IF = 100mA
IR = 10μA
IFP = 20mA
IFP = 20mA
19
26
850
40
80
1.6
5
30
20
20
mW
nm
nm
Deg
2
Volts
Volts
nsec
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
200mW
100mA
300mA
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-65°C to 150°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
150°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013