OD669 Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IRLED ILLUMINATOR

HIGH-POWER GaAlAs IRLED ILLUMINATOR
OD-669
EPOXY
.426
.432
.053
.067 _{LED CHIPS .140 R}
.325
.142
.152
(REF. ONLY)
.084
.096
.030
.342 R
.955
.965
.350
MIN
CATHODE
.170
MAX
DIMPLE
.480
1.225
1.255
ANODE
.680
.700
FEATURES
• Highest power output available
• 880nm peak emission
• Nine chips connected in series
• Very wide angle of emission
• Electrically isolated case
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P_o
Peak Emission Wavelength, λ_P
Spectral Bandwidth at 50%, ∆λ
Half Intensity Beam Angle, θ
TEST CONDITIONS
MIN
I_F = 300mA
390
I_F = 5A
I_F = 50mA
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
I_F = 300mA
I_R = 10µA
5
V_R = 0V
Fall Time
TYP
500
6500
880
80
120
13.5
30
11
3
3
MAX
15
UNITS
mW
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)²
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1_{Derate per Thermal Derating Curve above 25°C}
2_{Derate linearly above 25°C}
6W
400mA
5A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
Thermal Resistance, R_THJA¹
Thermal Resistance, R_THJA²
100°C
60°C/W Typical
16°C/W Typical
1_{Heat transfer minimized by measuring in still air with minimum heat conducting through leads}
2_{Air circulating at a rapid rate to keep case temperature at 25°C}
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com