OD-880L Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-880L
GLASS
DOME
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.183 .152
.186 .156
.024
.043
.100
.017
CATHODE
.143
.150
.041
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Medium emission angle for best coverage/power
density
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, P_o
Radiant Intensity, I_e
Peak Emission Wavelength, L_P
Spectral Bandwidth at 50%, $L
I_F = 100mA
I_F = 50mA
Half Intensity Beam Angle, Q
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
I_F = 100mA
I_R = 10MA
V_R = 0V
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
Continuous Forward Current
Peak Forward Current (10Ms, 400Hz)²
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1_{Derate per Thermal Derating Curve above 25°C}
2_{Derate linearly above 25°C}
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R_THJA¹
Thermal Resistance, R_THJA²
MIN
TYP
MAX
UNITS
18
20
mW
50
mW/sr
880
nm
80
nm
35
Deg
1.55
1.9
Volts
5
30
Volts
17
pF
0.5
Msec
0.5
Msec
190mW
100mA
3A
5V
260°C
-55°C TO 100°C
100°C
400°C/W Typical
135°C/W Typical
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com