OD-880F Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
.183 .152
.186 .154
.030
.040
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.100
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
• OD-880F1 selected to meet minimum radiant intensity
.017
CATHODE
.197
.205
.041
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Total Power Output, P_o
Radiant Intensity, I_e
OD-880F
OD-880F1
OD-880F
OD-880F1
I_F = 100mA
15
120
Peak Emission Wavelength, L_P
Spectral Bandwidth at 50%, $L
Half Intensity Beam Angle, Q
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
I_F = 50mA
I_F = 100mA
I_R = 10MA
5
V_R = 0V
Fall Time
TYP
17
8
135
160
880
80
8
1.55
30
17
0.5
0.5
MAX
1.9
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
Msec
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
Continuous Forward Current
Peak Forward Current (10Ms, 400Hz)²
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1_{Derate per Thermal Derating Curve above 25°C}
2_{Derate linearly above 25°C}
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
Thermal Resistance, R_THJA¹
Thermal Resistance, R_THJA²
100°C
350°C/W Typical
115°C/W Typical
1_{Heat transfer minimized by measuring in still air with minimum heat conducting through leads}
2_{Air circulating at a rapid rate to keep case temperature at 25°C}
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com