OD-880E Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-880E
EPOXY
DOME
.145
MAX
.178
.195
.022
ANODE
(CASE)
.209
.080
.220
.017
.100
1.00
MIN
CATHODE
.041
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission
• High uniform output
• TO-46 Header
All dimensions are nominal in inches unless otherwise
specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, P_o
Peak Emission Wavelength, L_P
Spectral Bandwidth at 50%, $L
Half Intensity Beam Angle, Q
I_F = 100mA
I_F = 50mA
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
I_F = 100mA
I_R = 10MA
V_R = 0V
Fall Time
MIN
TYP
MAX
UNITS
20
30
mW
880
nm
80
nm
90
Deg
1.55
1.9
Volts
5
30
Volts
17
pF
0.5
Msec
0.5
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
Continuous Forward Current
Peak Forward Current (10Ms, 400Hz)²
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1_{Derate per Thermal Derating Curve above 25°C}
2Derate _{linearly above 25°C}
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, R_THJA¹
Thermal Resistance, R_THJA2
100°C
400°C/W Typical
135°C/W Typical
1_{Heat transfer minimized by measuring in still air with minimum heat conducting through leads}
2Air _{circulating at a rapid rate to keep case temperature at 25°C}
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com