OD-850W Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-850W
FEATURES
• High optical output
• 850nm peak emission
• Hermetically sealed TO-46 package
• Wide emision angle to cover a large area
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Total Power Output, P_o
Peak Emission Wavelength, λ_P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Rise Time
Fall Time
I_F = 100mA
I_F = 20mA
I_F = 20mA
I_F = 20mA
I_F = 100mA
I_R = 10μA
I_FP = 50mA
I_FP = 50mA
30
40
850
40
70
80
1.6
5
30
20
20
mW
nm
nm
Deg
2
Volts
Volts
nsec
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)¹
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1_{Derate per Thermal Derating Curve above 25°C}
200mW
100mA
300mA
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-40°C to 100°C
Maximum Junction Temperature
Thermal Resistance, R_THJA¹
Thermal Resistance, R_THJA²
100°C
400°C/W Typical
135°C/W Typical
1_{Heat transfer minimized by measuring in still air with minimum heat conducting through leads}
2_{Air circulating at a rapid rate to keep case temperature at 25°C}
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com
Revision February 26, 2013