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OD-666_13 Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IRLED ILLUMINATOR
HIGH-POWER GaAlAs IRLED ILLUMINATOR
OD-666
EPOXY
.426
.432
.053
.067 LED CHIPS .140 R
.325
.142
.152
(REF. ONLY)
.084
.096
.030
.342 R
.955
.965
.350
MIN
CATHODE
.170
MAX
DIMPLE
.480
1.225
1.255
ANODE
.680
.700
FEATURES
• High reliability LPE GaAlAs IRLEDs
• Ultra high power output
• 880nm peak emission
• Six chips connected in series
• Very wide angle of emission
• Electrically isolated case
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, ∆λ
Half Intensity Beam Angle, θ
IF = 300mA
300
IF = 6A
IF = 50mA
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 300mA
IR = 10µA
5
VR = 0V
Fall Time
TYP
330
5000
880
80
120
9
30
15
2
2
MAX
10
UNITS
mW
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
4W
400mA
6A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
60°C/W Typical
16°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com