OD-24X24-C Datasheet, PDF (1/1 Pages) OptoDiode Corp – HIGH-POWER GaAlAs EMITTER CHIPS

HIGH-POWER GaAlAs EMITTER CHIPS
OD-24x24-C
.024
.005
.006 D
2 PLACES
.024
EMITTING
SURFACE
GOLD
CONTACTS
.005
.006
.006
N
.003
P
.005
FEATURES
• High current capability
• 2 bond pads for uniform output
• Gold contacts for high reliability bonding
• High reliability LPE GaAlAs IRLED chips
All dimensions are nominal values in inches unless
otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P_o
Peak Emission Wavelength, L_P
Spectral Bandwidth at 50%, $L
TEST CONDITIONS
I_F = 100mA
I_F = 50mA
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
I_F = 200mA
I_R = 10MA
V_R = 0V
Fall Time
MIN
TYP
MAX
UNITS
7
10
mW
880
nm
80
nm
1.6
2
Volts
5
30
Volts
60
pF
0.7
Msec
0.7
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation
Continuous Forward Current
Peak Forward Current (10Ms, 300 Hz)
Reverse Voltage
Storage and Operating Temperature Range
Maximum Junction Temperature
400mW
200mA
7A
5V
-65°C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com