OD-24F2 Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-24F2
GLASS
DOME
.183 .152
.186 .154
.030
.040
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.100
FEATURES
• High current capability
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Hermetically sealed TO-46 package
• Narrow angle of emission
.017
CATHODE
.197
.205
.041
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P_o
Radiant Intensity, I_e
Peak Emission Wavelength, L_P
Spectral Bandwidth at 50%, $L
Half Intensity Beam Angle, Q
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
TEST CONDITIONS
MIN
I_F = 200mA
20
I_F = 50mA
I_F = 100mA
I_R = 10MA
5
V_R = 0V
Fall Time
TYP
MAX
UNITS
25
mW
220
mW/sr
880
nm
80
nm
8
Deg
1.5
1.8
Volts
30
Volts
60
pF
0.7
Msec
0.7
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
Continuous Forward Current
Peak Forward Current (10Ms, 230Hz)²
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate _{per Thermal Derating Curve above 25°C}
2Derate _{linearly above 25°C}
360mW
200mA
7A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, R_THJA1
Thermal Resistance, R_THJA2
100°C
350°C/W Typical
115°C/W Typical
1Heat _{transfer minimized by measuring in still air with minimum heat conducting through leads}
2Air _{circulating at a rapid rate to keep case temperature at 25°C}
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com