OD-148-C Datasheet, PDF (1/1 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTER CHIPS

HIGH-POWER GaAlAs IR EMITTER CHIPS
OD-148-C
.014
EMITTING
SURFACE
GOLD
METALLIZATION
GOLD
CONTACTS
.008
.014
.002
N
.003
P
.005
FEATURES
• High reliability LPE GaAlAs IRLED chips
• Open center emission for imaging applications
• High output uniformity from emitting surfaces
• Gold contacts for high reliability bonding
All dimensions are nominal values in inches unless
otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P_o
Peak Emission Wavelength, L_P
Spectral Bandwidth at 50%, $L
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I_F = 100mA
6
8
mW
I_F = 50mA
880
nm
80
nm
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
I_F = 100mA
I_R = 10MA
V_R = 0V
1.55
1.9
Volts
5
30
Volts
17
pF
0.5
Msec
Fall Time
0.5
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation
Continuous Forward Current
Peak Forward Current (10Ms, 300 Hz)
Reverse Voltage
Storage and Operating Temperature Range
Maximum Junction Temperature
190mW
100mA
3A
5V
-65°C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com