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OD-110L Datasheet, PDF (1/2 Pages) OptoDiode Corp – SUPER HIGH-POWER GaAlAs IR EMITTERS Ultra high optical output
SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-110L
FEATURES
• Ultra high optical output
• Four wire bonds on die corners
• Very narrow optical beam
• Standard 3-lead TO-39 hermetic package
• Chip size: 0.026 x 0.026
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two Anode
pins must be externally connected together.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Rise Time
Fall Time
IF = 500mA
IF = 50mA
IF = 50mA
IF = 50mA
IF = 500mA
IR = 10μA
IFP = 50mA
IFP = 50mA
55
110
850
40
7
1.7
5
30
20
20
mW
nm
nm
Deg
2
Volts
Volts
nsec
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
1000mW
500mA
1.5A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-40°C to 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
150°C/W Typical
60°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013