AXUV100 Datasheet, PDF (1/2 Pages) OptoDiode Corp – ELECTRON DETECTION 100 mm2

ELECTRON DETECTION 100 mm²
AXUV100
FEATURES
• Ideal for electron detection
• Large detection area
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Active Area
10mm x 10mm
Responsivity, R
(see graphs on next page)
Shunt Resistance, Rsh
Reverse Breakdown Voltage, V_R
Capacitance, C
Rise Time
V_B = ±10mV
10
I_R = 1µA
5
V_R = 0V
V_R = 0V, R_L = 50Ω
TYP
100
50
10
10
10
MAX
44
UNITS
mm²
A/W
M-ohm
Volts
nF
usec
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Lead Soldering Temperature¹
1_{0.08" from case for 10 seconds.}
-40°C TO 70°C
70°C
260°C
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors”
prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone], Fax: [phone]
Email: [e-mail], Website: www.optodiode.com