OP165_14 Datasheet, PDF (3/4 Pages) OPTEK Technologies – Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode
OP165, OP166 Series
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1 µs pulse width, 300 pps)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
-40^o C to +100^o C
2.0 V
50 mA
3.0 A
260° C
100 mW⁽¹⁾
Electrical Characteristics (T_A = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
E_{E (APT)}
Apertured Radiant Incidence
OP165A, OP166A
1.95 -
-
mW/cm² I_F = 20 mA⁽²⁾
P_O
Radiant Power Output
OP165W, OP166W
0.50 -
-
mW I_F = 20 mA
V_F Forward Voltage
I_R
Reverse Current
λ_P
Wavelength at Peak Emission
B
Spectral Bandwidth between Half Power
Points
-
- 1.60
V I_F = 20 mA
-
- 100 µA V_R= 2 V
- 935 -
nm I_F = 10 mA
-
50
-
nm I_F = 10 mA
Spectral Shift with Temperature
∆λ_P /∆T
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
-
- ±0.30 -
nm/°C I_F = Constant
Emission Angle at Half Power Points
θ_HP
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
18
- Degree I_F = 20 mA
-
90
-
t_r
Output Rise Time
t_f
Output Fall Time
- 1000 -
- 500 -
ns
I_F(PK)=100 mA, PW=10 µs, D.C.=10.0%
ns
Notes:
1. Derate linearly 1.33 mW/°C above 25°C
2. E_E(APT) is a measurement of the average apertured rediant incidence
ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to
and centered on the mechanical axis of the lens, and 0.590” (14.99
mm) from the measurement surface. E_E(APT) is not necessarily
uniform within the measured areas.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone]
FAX: [phone] [e-mail] www.optekinc.com
Issue B 05/2011
Page 3 of 4