OP910 Datasheet, PDF (2/2 Pages) OPTEK Technologies – PIN SILICON PHOTODIODE

Type OP910
ElectricalCharacteristics (T_A = 25^o C un less oth er wise noted)
SYMBOL
PARAMETER
I_L
Light Current
I_D
V_(BR)R
tr
tf
∅
CP
Dark Current
Reverse Voltage Breakdown
Rise Time
Fall Time
Half Angle
Capacitance
MIN TYP MAX UNITS
TEST CON DI TIONS
10 13
µA
VR = 20 V, Ee = .50 mW/cm² note
2,3
1 10 nA V_R = 20 V, E_e = 0.0
100
V I_R = 100 µA
10
nS VR = 20 V, RL = 50 OHMS
10
nS VR = 20 V, RL = 50 OHMS
+/- 12
degr. IF = Constant
13
pF VR = 0 V, F = 1 Mhz, Ee = 0
Typi cal Per form ance Curves
Normalized Light Current vs
Reverse Voltage
TA = 25^o C
λ = 935 nm
Total Capacitance vs
Reverse Voltage
TA = 25^o C
Ee = 0 mW/cm²
f = 1 MHz
Normalized Light and Dark
Current vs Ambient Temperature
VR = 5 V
λ = 935 nm
Normalized to T_A = 25^o C
Light Current
Dark Current
VR - Reverse Voltage - V
VR - Reverse Voltage - V
TA - Ambient Temperature - ^o C
Light Current vs Irradiance
Switching Time Test Circuit
Ee - Irradiance - mW/cm²
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax [phone]
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