OP906 Datasheet, PDF (2/2 Pages) OPTEK Technologies – PIN Silicon Photodiode

Type OP906
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
SYMBOL
PARAMETER
IL
Reverse Light Current
ID
Reverse Dark Current
V_(BR)R Reverse Breakdown Voltage
V_F
Forward Voltage
C_T
Total Capacitance
tr, tf Rise Time, Fall Time
MIN
16
60
TYP MAX UNITS
TEST CONDITIONS
35
µA VR = 5 V, Ee = 0.50 mW/cm²⁽³⁾
1 60 nA VR = 30 V, Ee = 0
V I_R = 100 µA
1.2
V I_F = 1 mA
4
pF V_R = 20 V, E_e = 0, f = 1.0 MHz
5
ns VR = 20 V, λ= 850 nm, RL = 50 Ω
Typical Performance Curves
Normalized Light Current vs
Reverse Voltage
TA = 25^o C
λ= 935 nm
Normalized to VR = 5 V
VR - Reverse Voltage - V
Light Current vs. Irradiance
VR
TA
=
=
5V
25^oC
λ= 935 nm
Ee - Irradiance - mW/cm²
Total Capacitance vs
Reverse Voltage
TA
Ee
=
=
25^o C
0 mW/cm²
f = 1 MHz
VR - Reverse Voltage - V
Switching Time Test Circuit
Normalized Light and Dark
Current vs Ambient Temperature
VR = 5 V
λ= 935 nm
NT_Aor=m2a5li_ozeCd to
Light Current
Dark Current
TA - Ambient Temperature - ^oC
Light Current vs. Angular
Displacement
Test Conditions:
λ= 935 nm
VR = 5 V
Distance Lens to
Lens = 1.5 inches
θ - Angular Displacement - Deg.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
[phone]
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