OP750A Datasheet, PDF (2/2 Pages) OPTEK Technologies – NPN Pho totransistor with Base- Emitter Resistor

Types OP750A, OP750B, OP750C, OP750D
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
SYMBOL
PARAMETER
MIN
IC(ON)
On-State Collector Current
OP750A
OP750B
OP750C
OP750D
2.25
1.50
0.85
0.85
EKP
ICEO
IECO
Knee Point Irradiance
Collector-Emitter Dark Current
Emitter-Reverse Current
TYP
.03
MAX UNITS
TEST CONDITIONS
7.00
4.20
2.80
7.00
VCE = 5 V, Ee = 1 mW/cm²⁽³⁾
mA
mW/cm² VCE = 5 V⁽⁴⁾
100
nA VCE = 10 V, Ee = 0
100
µA VEC = 0.4 V
V_(BR)CEO Collector-Emitter Breakdown Voltage
30
V_CE(SAT) Collector-Emitter Saturation Voltage
V I_C = 100 µA
0.4
V I_C = 100 µA, E_e = 1 mW/cm²⁽³⁾
Typical Performance Curves
Normalized Collector Current
vs. Angular Displacement
Normalized Light and Dark
Current vs. Ambient Temperature
Light Current
Dark Current
q - Angluar Displacement - Deg.
TA - Ambient Temperature - °C
On-State Collector Current
vs. Irradiance
100
10
OP550
1
.1
OP750
.01
.001
.0001
.00001
.001
VCE = 5 V
LED: l= 935 nm
.01
.1
1
10
Ee - Irradiance - mW/cm²
Normalized Output vs.
Frequency
1.0
VR = 1 V
VCE = 5 V
50% Duty Cycle
LED: l= 935 nm
0.5
RL = 1KW
RL = 10KW
0.0
1
10
100
Frequency - KHz
1000
Typical Rise and Fall Time vs.
Load Resistance
120 _{VCC = 5 V}
105 ^{VRL = 1 V}
f = 100 Hz
90 PW = 1mS
75
60
45
30
15
0
0
LED = GaAIAs, l= 890 nm
VRL is voltage across RL
2
4
6
8
10
RL - Load Resistance - KW
Switching Time
Test Circuit
Test Conditions:
Light source is pulsed LED with tr
and tf £ 500 ns.
IF is adjusted for VOUT = 1 Volt.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 [phone]
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