OP599 Datasheet, PDF (2/2 Pages) OPTEK Technologies – NPN Plastic Silicon Phototransistors

Types OP599
Electrical Characteristics (T_A = 25^oC unless otherwise noted)
SYMBOL
PARAMETER
On-State Collector Current
IC(ON)
ICEO
V_(BR)CEO
V_(BR)ECO
VCE(SAT)
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
OP599D
OP599C
OP599B
OP599A
MIN TYP MAX UNITS
TEST CONDITIONS
0.20
mA See Note (3)
0.40
1.20
2.35
1.95
3.85
mA See Note (3)
mA See Note (3)
mA See Note (3)
100 nA VCE = 10.0 V, Ee = 0
30
V _{IC = 100 µA}
5.0
V _{IE = 100 µA}
0.40
V
IC = 100 µA
Ee = 0.25 mW/cm²⁽³⁾
Typical Performance Curves
Ee - Irradiance - mW/cm²
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
[phone]
Fax [phone]
3-35