OP580 Datasheet, PDF (2/4 Pages) OPTEK Technologies – Silicon Phototransistor in SMT Plastic Package

SMT Silicon Phototransistor
OP580
Absolute Maximum Ratings
T_A = 25^o C unless otherwise noted
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
-40° C to +85° C
-25° C to +85° C
260° C⁽¹⁾
30 V
5V
20 mA
75 mW⁽²⁾
Electrical Characteristics (T_A = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
CONDITIONS
I_C(ON)
V_CE(SAT)
I_CEO
On-State Collector Current
1.0
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
mA V_CE = 5.0V, E_e = 5.0mW/cm^{2 (3)}
0.4
V
I_C = 100µA, E_e = 2.0mW/cm^{2 (3)}
100
nA
V_CE = 5.0V, E_e = 0 ⁽⁴⁾
V_(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I_C = 100µA
V_(BR)ECO
t_r, t_f
Emitter-Collector Breakdown Voltage
5
Rise and Fall Times
15
V
I_E = 100µA
µs I_C = 1mA, R_L = 1KΩ
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4.
To
Calculate
typical
collector
dark
current
in
µA,
use
the
formula
I_CEO
=
10^(0.04
T -3/4)
A
where T_A is the ambient temperature in ° C.
Relative On-State Collector
Current vs. Irradiance
160%
Normalized at Ee = 5mW/cm²
Conditions: VCE = 5V,
140% ^{λ = 935nm, TA = 25 °C}
120%
100%
80%
60%
40%
20%
Relative On-State Collector Current
vs. Temperature
140%
130%
Normalized at TA = 25°C .
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
80°C
120%
110%
100%
90%
80%
-40°C
70%
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
-25
Ee—Irradiance (mW/cm²)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] FAX: (972) 323– 2396 [e-mail] www.optekinc.com
0
25
50
75
100
Temperature—(°C)
Issue 1.1 07.05
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