OP294 Datasheet, PDF (2/2 Pages) OPTEK Technologies – GaAlAs Plastic Infrared Emitting Diode

Types OP294, OP299
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
SYMBOL
PARAMETER
Ee(APT) ^{Apertured Radiant Incidence}
OP294
OP299
VF
Forward Voltage
IR
Reverse Current
λp
Wavelength at Peak Emission
B
Spectral Bandwidth Between Half Power Points
∆λp/∆T Spectral Shift with Temperature
θ_HP
Emission Angle at Half Power Points
OP294
OP299
t_r
Output Rise Time
t_f
Output Fall Time
MIN
0.50
0.15
TYP MAX UNITS TEST CONDITIONS
1.50 mW/cm² IF = 5 mA⁽⁴⁾
0.45 mW/cm² IF = 5 mA⁽³⁾
1.50 V IF = 5 mA
10
µA VR = 2 V
890
nm IF = 10 mA
80
+0.18
nm I_F = 10 mA
nm/^o C IF = Constant
50
Deg. IF = 10 mA
20
Deg. IF = 10 mA
500
ns I_F(PK) = 100 mA,
250
ns ^{PW = 10 µs, D.C. = 10%}
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
[phone]
Fax [phone]
2-57