OP245PS_06 Datasheet, PDF (2/3 Pages) OPTEK Technologies – Plastic Point Source Infrared Emitting Diode

Plastic Point Source Infrared Emitting Diode
OP245PS
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
-40^o C to +100^o C
2.0 V
50 mA
1.0 A
260° C⁽¹⁾
100 mW⁽²⁾
Electrical Characteristics (T_A = 25°C unless otherwise noted)
SYMBO
L
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
E_{E (APT)} Apertured Radiant Incidence
0.12 -
V_F Forward Voltage
1.2 -
I_R Reverse Current
-
10
P ^{Wavelength at Peak Emission}
- 850
B
Spectral Bandwidth between Half Power
Points
-
50
0.8 mW/cm² I_F = 20 mA^(,3)
1.7
V I_F = 20 mA
-
µA V_R= 2 V
-
nm I_F = 20 mA
-
nm I_F = 20 mA
HP ^{Emission Angle at Half Power Points}
t_r
Output Rise Time
t_f
Output Fall Time
- ±18° - Degree I_F = 20 mA
-
10
-
-
10
-
ns
I_F(PK) = 20 mA, PW = 10 µs, D.C. = 10%
ns
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly 1.33 mW/°C above 25°C.
3. E_E(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter
perpendicular to and centered on the mechanical axis of the lens and 0.653” (16.6 mm) from the lens tip. E_E(APT) is not necessarily
uniform within the measured area.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 07/06
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone]
FAX: [phone] [e-mail] www.optekinc.com