OP235TX Datasheet, PDF (2/2 Pages) OPTEK Technologies – Hi- Reliability GaAlAs Infrared Emitting Diodes

Types OP235TX, OP235TXV, OP236TX, OP236TXV
Electrical Characteristics (T_A = 25^o C unless otherwise noted)
Symbol
E_e(APT)
Parameter
Apertured Radiant Incidence^(3,4)
OP235TX,TXV
OP236TX,TXV
Min Typ Max Units
Test Conditions (3)
1.5
mW/cm I_F = 100 mA
3.5
2 _{IF = 100 mA}
mW/cm
2
V_F
Forward Voltage⁽⁶⁾
I_R
Reverse Current
1.1
2.0
V I_F = 100 mA
1.3
2.2
V I_F = 100 mA, T_A = -55^o C
0.9
1.8
V I_F = 100 mA, T_A = 100^o C
100 µA V_R = 2.0 V
λp
Wavelength at Peak Emission
890
nm I_F = 100 mA
B
Spectral Bandwidth Between Half Power
50
Points
nm IF = 100 mA
θ_HP Emission Angle at Half Power Points
18.0
Deg. IF = 100 mA
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
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