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OP230WPS_03 Datasheet, PDF (2/3 Pages) OPTEK Technologies – Point Source Infrared Emitting Diode
Point Source Infrared Emitting Diode
OP230WPS
Absolute Maximum Ratings
TA = 25o C unless otherwise noted
Storage Temperature
Operating Temperature
Lead Soldering Temperature (1/16” (1.6mm) from case for 5 seconds with soldering iron)
Forward Current
Peak Forward current (2 µs pulse width, 0.1% Duty Cycle)
Reverse DC Voltage
Power Dissipation
-55° C to +150° C
-40° C to +125° C
260° C (2)
100 mA
3.0 A
2.0 V
100 mW (3)
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
CONDITIONS
Ee(APT)
VF
IR
λP
β
θHP
tr
tf
Apertured Irradiance
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth @50% IF=20mA
Emission Angle at Half Power
Optical Rise Time
Optical Fall Time
0.50
850
25
±45
20
20
mW/cm2 IF = 100 mA (4)
2.2
V IF = 100 mA
10
µA VR = 2.5 V
nm IF = 20 mA
nm IF = 20 mA
Degrees IF = 20 mA
ns IF(Peak) = 100 mA,
Pulse Width=10µs,
ns Duty Cycle=10%
Notes:
(1) All parameters tested using pulse technique.
(2) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(3) Derate at 1mW/°C above 25°C.
(4) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250” (6.35mm) in diameter and
perpendicular to and centered to the mechanical axis of the emitting surface at a distance of 0.466” (11.84mm). Ee(APT) is not nec-
essarily uniform within the measured area.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue 1.1 09.05
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