OP215A_14 Datasheet, PDF (2/3 Pages) OPTEK Technologies – Hermetic Infrared Emitting Diode

Hermetic Infrared Emitting Diode
OP215, OP216
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (2µs pulse with 0.1% duty cycle)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
-65^o C to +150^o C
-65^o C to +125^o C
2.0 V
100 mA
1.0 A
260° C⁽¹⁾⁽²⁾
150 mW⁽³⁾
Electrical Characteristics (T_A = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
E_E
(3)
(APT)
Apertured Radiant Incidence
OP216A
OP216B
OP216C
OP216D
1.20
0.60 -
0.30
0.20
- mW/cm² I_F = 50 mA⁽⁴⁾
V_F Forward Voltage
-
-
1.80
V I_F = 50 mA
I_R
Reverse Current
-
- 100 µA V_R= 2.0 V
λ_P
Wavelength at Peak Emission
B
Spectral Bandwidth between
Half Power Points
∆λ_P /∆T Spectral Shift with Temperature
- 890 -
nm I_F = 10 mA
-
80
-
nm I_F = 10 mA
- +0.18 - nm/°C I_F = Constant
θ_HP Emission Angle at Half Power Points
-
24
- ^{Degree IF = 50 mA}
t_r
Output Rise Time
t_f
Output Fall Time
- 500 -
- 250 -
ns
I_F(PK)=100 mA, PW=10 µs, and
D.C.=10.0%
ns
Notes:
1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.
2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.50 mW/° C above 25° C.
4. For OP216, E_E(APT) is a measurement using a 0.180” (4.57 mm) diameter apertured sensor placed 0.653” (16.59 mm) from the lens
tip. E_E(APT) is not necessarily uniform within the measured area.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 06/08
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone]
FAX: [phone] [e-mail] www.optekinc.com