 English |
|
|
|
|
|
|
|
| HCT802 Datasheet, PDF (2/2 Pages) OPTEK Technologies – Dual En hance ment Mode MOSFET | |||
| |||
| ◁ |
Types HCT802, HCT802TX, HCT802TXV
Electrical Characteristics (TA = 25o C unless specified otherwise)
Symbol
Parameters
Device Min Max Units
B=Both
Test Conditions
BVDSS Drain-Source Breakdown
B
90*
V ID = 10 µA*, VGS = 0
VTH Gate Threshold Voltage
N
0.75 2.5
V VGS = VDS, ID = 1 mA
P
-2.0 -4.5 V ID = -1 mA
IGSS Gate-Body Leakage
B
±100 nA VGS = ± 20 V, VDS = 0
IDSS Zero Gate Voltage Drain Current B
B
10*
500*
µA VDS = 90 V*, VGS = 0 V
µA Tj = 150o C
ID(on) On-State Drain Current
N
1.5
A VDS = 25 V, VGS = 10 V
P
-1.1
A VDS = -15 V, VGS = -10 V
RDS(on) Drain-Source on Resistance
B
5
⦠VGS = 10 V*, ID = 1 A*
Gfs
Forward Transconductance
N
170
mmho VDS = 25 V, ID = 0.5 A
P
200
mmho VDS = -10 V, ID = -0.5 A
CISS Input Capacitance
N
70
pf VDS = 25 V, VGS = 0 V, f = 1 MHz
P
150 pf VDS = -25 V, VGS = 0 V, f = 1 MHz
COSS Common Source Output Capaci- N
tance
P
40
pf VDS = 25 V, VGS = 0 V, f = 1 MHz
60
pf VDS = -25 V, VGS = 0 V, f = 1 MHz
CRSS Reverse Transfer Capacitance
N
10
pf VDS = 25 V, VGS = 0 A, f = 1 MHz
P
25
pf VDS = -25 V, VGS = 0 A, f = 1 MHz
t(on)
Turn-on-time
N
15
ns VDD = 25 V, ID = 1 A, RL = 50 â¦
P
50
ns VDD = -25 V, ID = -0.5 A, RL = 50 â¦
t(off)
Turn-off-time
N
17
ns VDD = 25 V, ID = 1 A, RL = 50 â¦
P
50
ns VDD = -25 V, ID = -0.5 A, RL = 50 â¦
* Reverse polarity for P-Channel device
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-35
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese