OPE5794 Datasheet, PDF (1/2 Pages) OPTEK Technologies – GaAlAs Infrared Emitter

GaAlAs Infrared Emitter
OPE5794
The OPE5794 is GaAlAs infrared emitting diode
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 plastic package
and has medium beam angle with lensed package
and cup frame
DIMENSIONS (Unit:mm)
3.0
FEATURES
• High-output power
• Medium beam angle
• Available for pulse operating
2- 0.5
2.5
APPLICATIONS
• Optical emitters
Anode
Cathode
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power dissipation
Forward current
Pulse forward current
1
Reverse voltage
Operating temp.
P_D
I_F
I_FP
V_R
Topr.
80
60
0.8
5.0
-20~ +70
Storage temp.
Tstg.
-20~ +80
Soldering temp.
2 _Tsol.
240.
1_{.Duty ratio = 1/100, pulse width=0.12ms.}
2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
(Ta=25°C )
Unit
A
°C
°C
°C
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
Spectral bandwidth 50%
Half angle
Conditions
I_F =40mA
V_R= 5V
f = 1MHz
I_F=40mA
I_F= 40mA
I_F= 40mA
I_F=40mA
(Ta=25°C)
Min. Typ. Max. Unit
1.2
1.5
V
10
µA
20
pF
20
mW/
940
nm
45
nm
±17
deg.