OP755A Datasheet, PDF (1/2 Pages) OPTEK Technologies – NPN Photo transistor with Base-Emitter Resistor

Product Bulletin OP755
June 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP755A, OP755B, OP755C, OP755D
Features
Absolute Maximum Ratings (TA = 25^o C unless otherwise noted)
• Wide receiving angle
• Variety of sensitivity ranges
• Side-looking package for space limited
applications
• Base-emitter resistor provides ambient
light protection
Description
The OP755 device consists of a NPN
silicon phototransistor molded in blue
tinted epoxy packages. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy PC
board mounting of slotted optical
switches or optical interrupt detectors.
The series is mechanically and spectrally
matched to the OP140 and OP240 series
of infrared emitting diodes.
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40• C to +100• C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260• C⁽¹⁾
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW⁽²⁾
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(1) RMA flux is recommended. Duration can be extended to 10 sec. max. When flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 2.0 mW/• C above 25• C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50 • A.
Typical Performance Curves
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Schematic
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Optek Technology, Inc.
1215 W. Crosby Road
É¿ª»´»²¹¬¸ ó ²³
Carrollton, Texas 75006
9
[phone]
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