OP705A Datasheet, PDF (1/2 Pages) OPTEK Technologies – NPN Pho to tran sistor with Base-Emit ter Resistor

Product Bulletin OP705
March 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP705A, OP705B, OP705C, OP705D
Features
• Narrow receiving angle
• Variety of sensitivity ranges
• T-1 package style
• Small package size for space limited
applications
• Base-emitter resistor provides ambient
light protection
Description
The OP705 series devices consist of
NPN silicon phototransistors molded in
blue tinted epoxy packages. The narrow
receiving angle provides excellent on-
axis coupling. These devices are 100%
production tested using infrared light for
close correlation with Optek’s GaAs and
GaAlAs emitters.
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Absolute Maximum Ratings (TA = 25^o C unless otherwise noted)
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -40^o C to +100^o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260^o C⁽¹⁾
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW⁽²⁾
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(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW /^o C above 25^o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50•• A.
Typical Performance Curves
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Schematic
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Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
5
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