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AOP604 Datasheet, PDF (1/11 Pages) OPTEK Technologies – Complementary Enhancement Mode Field Effect Transistor | |||
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March 2003
AOP604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP604 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses.
Features
n-channel p-channel
VDS (V) = 30V
ID = 7.5A
RDS(ON)
< 28mâ¦
-30V
-6.6A
< 35m⦠(VGS = 10V)
< 43mâ¦
Schottky
< 58m⦠(VGS = 4.5V)
VDS=30V, IF=3A, VF<0.5V@1A
PDIP-8
S1/A
G1
1
2
8
7
D1/K
D1/K
N-ch
S2 3 6 D2
G2 4 5 D2 P-ch
D2
D1
K
G2
G1
A
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain
TA=25°C
7.5
Current A
TA=70°C
ID
6
Pulsed Drain Current B
IDM
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
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